Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals
文献类型：期刊论文
| ; | |
| 作者 | Wei, TB; Huo, ZQ; Zhang, YH; Zheng, HY; Chen, Y; Yang, JK; Hu, Q; Duan, RF; Wang, JX; Zeng, YP |
| 刊名 | optics express
 ; OPTICS EXPRESS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 22期号:13页码:a1093-a1100 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26276]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wei, TB,Huo, ZQ,Zhang, YH,et al. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals, Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals[J]. optics express, OPTICS EXPRESS,2014, 2014,22, 22(13):a1093-a1100, A1093-A1100. |
| APA | Wei, TB.,Huo, ZQ.,Zhang, YH.,Zheng, HY.,Chen, Y.,...&Li, JM.(2014).Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals.optics express,22(13),a1093-a1100. |
| MLA | Wei, TB,et al."Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals".optics express 22.13(2014):a1093-a1100. |
入库方式： OAI收割
来源：半导体研究所
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