Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
文献类型：期刊论文
| ; | |
| 作者 | Li, Z; Kang, JJ; Wang, BW; Li, HJ; Weng, YH; Lee, YC; Liu, ZQ; Yi, XY; Feng, ZC; Wang, GH |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 115期号:8页码:083112 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-19 ; 2015-03-19 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/25961]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Li, Z,Kang, JJ,Wang, BW,et al. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells, Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2014, 2014,115, 115(8):083112, 083112. |
| APA | Li, Z.,Kang, JJ.,Wang, BW.,Li, HJ.,Weng, YH.,...&Wang, GH.(2014).Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells.journal of applied physics,115(8),083112. |
| MLA | Li, Z,et al."Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells".journal of applied physics 115.8(2014):083112. |
入库方式： OAI收割
来源：半导体研究所
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