The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
文献类型：期刊论文
| ; | |
| 作者 | Zhang, YH; Wei, TB; Wang, JX; Lan, D; Chen, Y; Hu, Q; Lu, HX; Li, JM |
| 刊名 | aip advances
 ; AIP ADVANCES
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 4期号:2页码:027123 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-20 ; 2015-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26047]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing, The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. aip advances, AIP ADVANCES,2014, 2014,4, 4(2):027123, 027123. |
| APA | Zhang, YH.,Wei, TB.,Wang, JX.,Lan, D.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.aip advances,4(2),027123. |
| MLA | Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".aip advances 4.2(2014):027123. |
入库方式： OAI收割
来源：半导体研究所
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