Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
文献类型：期刊论文
| ; | |
| 作者 | Wei, TB; Ji, XL; Wu, K; Zheng, HY; Du, CX; Chen, Y; Yan, QF; Zhao, LX; Zhou, Z; Wang, JX |
| 刊名 | optics letters
 ; OPTICS LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 39期号:2页码:379-382 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-03-25 ; 2015-03-25 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26161]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wei, TB,Ji, XL,Wu, K,et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes, Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes[J]. optics letters, OPTICS LETTERS,2014, 2014,39, 39(2):379-382, 379-382. |
| APA | Wei, TB.,Ji, XL.,Wu, K.,Zheng, HY.,Du, CX.,...&Li, JM.(2014).Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.optics letters,39(2),379-382. |
| MLA | Wei, TB,et al."Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes".optics letters 39.2(2014):379-382. |
入库方式： OAI收割
来源：半导体研究所
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