Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
文献类型：期刊论文
| ; | |
| 作者 | Hu, PG; Zhang, J; Yoon, MN; Qiao, XF; Zhang, X; Feng, W; Tan, PH; Zheng, W; Liu, JJ; Wang, XN |
| 刊名 | nano research
 ; NANO RESEARCH
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 7期号:5页码:694-703 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-04-02 ; 2015-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26309]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu, PG,Zhang, J,Yoon, MN,et al. Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap, Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap[J]. nano research, NANO RESEARCH,2014, 2014,7, 7(5):694-703, 694-703. |
| APA | Hu, PG.,Zhang, J.,Yoon, MN.,Qiao, XF.,Zhang, X.,...&Xiao, K.(2014).Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap.nano research,7(5),694-703. |
| MLA | Hu, PG,et al."Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap".nano research 7.5(2014):694-703. |
入库方式： OAI收割
来源：半导体研究所
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