Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
文献类型：期刊论文
| ; | |
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 23期号:6页码:068801 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-04-02 ; 2015-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26415]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells, Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. chinese physics b, CHINESE PHYSICS B,2014, 2014,23, 23(6):068801, 068801. |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells.chinese physics b,23(6),068801. |
| MLA | Yang, J,et al."Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells".chinese physics b 23.6(2014):068801. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。