Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
文献类型：期刊论文
| ; | |
| 作者 | Yang, J; Zhao, DG; Jiang, DS; Zhu, JJ; Yang, H; Chen, P; Liu, ZS; Le, LC; Li, XJ; He, XG |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 115期号:16页码:163704 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2015-04-02 ; 2015-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26339]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yang, J,Zhao, DG,Jiang, DS,et al. Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films, Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2014, 2014,115, 115(16):163704, 163704. |
| APA | Yang, J.,Zhao, DG.,Jiang, DS.,Zhu, JJ.,Yang, H.,...&Wang, H.(2014).Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films.journal of applied physics,115(16),163704. |
| MLA | Yang, J,et al."Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films".journal of applied physics 115.16(2014):163704. |
入库方式： OAI收割
来源：半导体研究所
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