Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography
文献类型：期刊论文
| ; | |
| 作者 | Wu, K; Wei, TB; Zheng, HY; Lan, D; Wei, XC; Hu, Q; Lu, HX; Wang, JX; Luo, Y; Li, JM |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 115期号:12页码:123101 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 公开日期 | 2015-04-02 ; 2015-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26382]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wu, K,Wei, TB,Zheng, HY,et al. Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography, Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2014, 2014,115, 115(12):123101, 123101. |
| APA | Wu, K.,Wei, TB.,Zheng, HY.,Lan, D.,Wei, XC.,...&Li, JM.(2014).Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography.journal of applied physics,115(12),123101. |
| MLA | Wu, K,et al."Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography".journal of applied physics 115.12(2014):123101. |
入库方式： OAI收割
来源：半导体研究所
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