Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage
文献类型：期刊论文
| ; | |
| 作者 | Tian, T; Wang, LC; Guo, EQ; Liu, ZQ; Zhan, T; Guo, JX; Yi, XY; Li, J; Wang, GH |
| 刊名 | journal of physics d-applied physics
 ; JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 47期号:11页码:115102 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-04-02 ; 2015-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26389]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Tian, T,Wang, LC,Guo, EQ,et al. Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage, Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage[J]. journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014, 2014,47, 47(11):115102, 115102. |
| APA | Tian, T.,Wang, LC.,Guo, EQ.,Liu, ZQ.,Zhan, T.,...&Wang, GH.(2014).Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage.journal of physics d-applied physics,47(11),115102. |
| MLA | Tian, T,et al."Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage".journal of physics d-applied physics 47.11(2014):115102. |
入库方式： OAI收割
来源：半导体研究所
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