中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

文献类型:期刊论文

;
作者Yang, SX; Tongay, S; Li, Y; Yue, Q; Xia, JB; Li, SS; Li, JB; Wei, SH
刊名nanoscale ; NANOSCALE
出版日期2014 ; 2014
卷号6期号:13页码:7226-7231
学科主题半导体物理 ; 半导体物理
收录类别SCI
语种英语 ; 英语
公开日期2015-05-11 ; 2015-05-11
源URL[http://ir.semi.ac.cn/handle/172111/26437]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Yang, SX,Tongay, S,Li, Y,et al. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors, Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors[J]. nanoscale, NANOSCALE,2014, 2014,6, 6(13):7226-7231, 7226-7231.
APA Yang, SX.,Tongay, S.,Li, Y.,Yue, Q.,Xia, JB.,...&Wei, SH.(2014).Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors.nanoscale,6(13),7226-7231.
MLA Yang, SX,et al."Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors".nanoscale 6.13(2014):7226-7231.

入库方式: OAI收割

来源:半导体研究所

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