High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
文献类型：期刊论文
| ; | |
| 作者 | Xing, JL; Zhang, Y; Xu, YQ; Wang, GW; Wang, J; Xiang, W; Ni, HQ; Ren, ZW; He, ZH; Niu, ZC |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 23期号:1页码:017805 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26445]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xing, JL,Zhang, Y,Xu, YQ,et al. High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy, High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. chinese physics b, CHINESE PHYSICS B,2014, 2014,23, 23(1):017805, 017805. |
| APA | Xing, JL.,Zhang, Y.,Xu, YQ.,Wang, GW.,Wang, J.,...&Niu, ZC.(2014).High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy.chinese physics b,23(1),017805. |
| MLA | Xing, JL,et al."High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy".chinese physics b 23.1(2014):017805. |
入库方式： OAI收割
来源：半导体研究所
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