Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes
文献类型：期刊论文
| ; | |
| 作者 | Li, MF; Ni, HQ; Ding, Y; David, B; Kong, L; Ana, CM; Niu, ZC |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 23期号:2页码:027803 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26454]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, MF,Ni, HQ,Ding, Y,et al. Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes, Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes[J]. chinese physics b, CHINESE PHYSICS B,2014, 2014,23, 23(2):027803, 027803. |
| APA | Li, MF.,Ni, HQ.,Ding, Y.,David, B.,Kong, L.,...&Niu, ZC.(2014).Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes.chinese physics b,23(2),027803. |
| MLA | Li, MF,et al."Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes".chinese physics b 23.2(2014):027803. |
入库方式： OAI收割
来源：半导体研究所
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