Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei
文献类型：期刊论文
| ; | |
| 作者 | Li, B; Yang, SX; Huo, NJ; Li, YT; Yang, JH; Li, RX; Fan, C; Lu, FY |
| 刊名 | rsc advances
 ; RSC ADVANCES
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 4期号:50页码:26407-26412 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 中文 ; 中文 |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26477]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, B,Yang, SX,Huo, NJ,et al. Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei, Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei[J]. rsc advances, RSC ADVANCES,2014, 2014,4, 4(50):26407-26412, 26407-26412. |
| APA | Li, B.,Yang, SX.,Huo, NJ.,Li, YT.,Yang, JH.,...&Lu, FY.(2014).Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei.rsc advances,4(50),26407-26412. |
| MLA | Li, B,et al."Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei".rsc advances 4.50(2014):26407-26412. |
入库方式： OAI收割
来源：半导体研究所
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