Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth
文献类型：期刊论文
| ; | |
| 作者 | Wen, JJ; Zhang, DL; Liu, Z; Zhou, TW; Xue, CL; Zuo, YH; Li, CB; Wang, QM; Cheng, BW |
| 刊名 | ecs solid state letters
 ; ECS SOLID STATE LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 3期号:7页码:q33-q35 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26441]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Wen, JJ,Zhang, DL,Liu, Z,et al. Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth, Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth[J]. ecs solid state letters, ECS SOLID STATE LETTERS,2014, 2014,3, 3(7):q33-q35, Q33-Q35. |
| APA | Wen, JJ.,Zhang, DL.,Liu, Z.,Zhou, TW.,Xue, CL.,...&Cheng, BW.(2014).Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth.ecs solid state letters,3(7),q33-q35. |
| MLA | Wen, JJ,et al."Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth".ecs solid state letters 3.7(2014):q33-q35. |
入库方式： OAI收割
来源：半导体研究所
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