Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth
文献类型：期刊论文
| ; | |
| 作者 | Yang, JK; Wei, TB; Huo, ZQ; Zhang, YH; Hu, Q; Wei, XC; Sun, BJ; Duan, RF; Wang, JX |
| 刊名 | crystengcomm
 ; CRYSTENGCOMM
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 16期号:21页码:4562-4567 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26439]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Yang, JK,Wei, TB,Huo, ZQ,et al. Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth, Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth[J]. crystengcomm, CRYSTENGCOMM,2014, 2014,16, 16(21):4562-4567, 4562-4567. |
| APA | Yang, JK.,Wei, TB.,Huo, ZQ.,Zhang, YH.,Hu, Q.,...&Wang, JX.(2014).Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth.crystengcomm,16(21),4562-4567. |
| MLA | Yang, JK,et al."Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth".crystengcomm 16.21(2014):4562-4567. |
入库方式： OAI收割
来源：半导体研究所
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