Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes
文献类型：期刊论文
| ; | |
| 作者 | Zhu, SX; Wang, JX; Yan, JC; Zhang, Y; Pei, YR; Si, Z; Yang, H; Zhao, LX; Liu, Z; Li, JM |
| 刊名 | ecs solid state letters
 ; ECS SOLID STATE LETTERS
|
| 出版日期 | 2014 ; 2014 |
| 卷号 | 3期号:3页码:r11-r13 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2015-05-11 ; 2015-05-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26449]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhu, SX,Wang, JX,Yan, JC,et al. Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes, Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes[J]. ecs solid state letters, ECS SOLID STATE LETTERS,2014, 2014,3, 3(3):r11-r13, R11-R13. |
| APA | Zhu, SX.,Wang, JX.,Yan, JC.,Zhang, Y.,Pei, YR.,...&Li, JM.(2014).Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes.ecs solid state letters,3(3),r11-r13. |
| MLA | Zhu, SX,et al."Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes".ecs solid state letters 3.3(2014):r11-r13. |
入库方式： OAI收割
来源：半导体研究所
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