Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas
文献类型：期刊论文
| 作者 | Zhang, ZH ; Song, SN ; Song, ZT ; Cheng, Y ; Peng, C ; Zhang, L ; Cao, DC ; Guo, XH ; Yin, WJ ; Wu, LC ; Liu, B |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2014 |
| 卷号 | 115页码:51—54 |
| 关键词 | PHASE-CHANGE MATERIALS MEMORIES |
| ISSN号 | 0167-9317 |
| 通讯作者 | zhzhang@mail.sim.ac.cn ; songsannian@mail.sim.ac.cn |
| 英文摘要 | Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx, on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process. (C) 2013 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000330502700011 |
| 公开日期 | 2015-03-13 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/14032]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Zhang, ZH,Song, SN,Song, ZT,et al. Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas[J]. MICROELECTRONIC ENGINEERING,2014,115:51—54. |
| APA | Zhang, ZH.,Song, SN.,Song, ZT.,Cheng, Y.,Peng, C.,...&Liu, B.(2014).Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas.MICROELECTRONIC ENGINEERING,115,51—54. |
| MLA | Zhang, ZH,et al."Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas".MICROELECTRONIC ENGINEERING 115(2014):51—54. |
入库方式： OAI收割
来源：上海应用物理研究所
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