Evolution of amorphization and nanohardness in SiC under Xe ion irradiation
文献类型:期刊论文
作者 | Li, JJ ; Huang, HF ; Lei, GH ; Huang, Q ; Liu, RD ; Li, DH ; Yan, L |
刊名 | JOURNAL OF NUCLEAR MATERIALS |
出版日期 | 2014 |
卷号 | 454期号:42007页码:173—177 |
ISSN号 | 0022-3115 |
关键词 | SILICON-CARBIDE MECHANICAL-PROPERTIES NEUTRON-IRRADIATION RAMAN-SPECTROSCOPY HEAVY-ION DAMAGE BEAM INDENTATION IMPLANTATION TEMPERATURE |
通讯作者 | yanlong@sinap.ac.cn |
英文摘要 | Amorphization and nanohardness changes of SiC irradiated with 7 MeV Xenon ions at doses from 0.006 to 2 dpa were investigated. At a dose of 0.6 dpa, the results of Raman spectrum reveal the formation of Si-Si and C-C bonds within the SiC network while TEM results show the appearance of amorphous islands. The hardness of irradiated SiC is regarded as a combined result of covalent-bond damage and hardening effect of defects. In the low dpa regime (<0.06 dpa), the hardness of irradiated SiC increases with increasing dose, which is mainly caused by hardening effect. Up to 0.06 dpa, the hardening increases about 20.3%. And an equilibrium is reached between the covalent-bond damage and the hardening effect when irradiated SiC begins to amorphize (0.6 dpa). Above the dose of 0.6 dpa, the hardness decreases strongly due to the grievous covalent-bond damage. (C) 2014 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000344428900025 |
公开日期 | 2015-03-13 |
源URL | [http://ir.sinap.ac.cn/handle/331007/14123] |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Li, JJ,Huang, HF,Lei, GH,et al. Evolution of amorphization and nanohardness in SiC under Xe ion irradiation[J]. JOURNAL OF NUCLEAR MATERIALS,2014,454(42007):173—177. |
APA | Li, JJ.,Huang, HF.,Lei, GH.,Huang, Q.,Liu, RD.,...&Yan, L.(2014).Evolution of amorphization and nanohardness in SiC under Xe ion irradiation.JOURNAL OF NUCLEAR MATERIALS,454(42007),173—177. |
MLA | Li, JJ,et al."Evolution of amorphization and nanohardness in SiC under Xe ion irradiation".JOURNAL OF NUCLEAR MATERIALS 454.42007(2014):173—177. |
入库方式: OAI收割
来源:上海应用物理研究所
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