中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evolution of amorphization and nanohardness in SiC under Xe ion irradiation

文献类型:期刊论文

作者Li, JJ ; Huang, HF ; Lei, GH ; Huang, Q ; Liu, RD ; Li, DH ; Yan, L
刊名JOURNAL OF NUCLEAR MATERIALS
出版日期2014
卷号454期号:42007页码:173—177
ISSN号0022-3115
关键词SILICON-CARBIDE MECHANICAL-PROPERTIES NEUTRON-IRRADIATION RAMAN-SPECTROSCOPY HEAVY-ION DAMAGE BEAM INDENTATION IMPLANTATION TEMPERATURE
通讯作者yanlong@sinap.ac.cn
英文摘要Amorphization and nanohardness changes of SiC irradiated with 7 MeV Xenon ions at doses from 0.006 to 2 dpa were investigated. At a dose of 0.6 dpa, the results of Raman spectrum reveal the formation of Si-Si and C-C bonds within the SiC network while TEM results show the appearance of amorphous islands. The hardness of irradiated SiC is regarded as a combined result of covalent-bond damage and hardening effect of defects. In the low dpa regime (<0.06 dpa), the hardness of irradiated SiC increases with increasing dose, which is mainly caused by hardening effect. Up to 0.06 dpa, the hardening increases about 20.3%. And an equilibrium is reached between the covalent-bond damage and the hardening effect when irradiated SiC begins to amorphize (0.6 dpa). Above the dose of 0.6 dpa, the hardness decreases strongly due to the grievous covalent-bond damage. (C) 2014 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
WOS记录号WOS:000344428900025
公开日期2015-03-13
源URL[http://ir.sinap.ac.cn/handle/331007/14123]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Li, JJ,Huang, HF,Lei, GH,et al. Evolution of amorphization and nanohardness in SiC under Xe ion irradiation[J]. JOURNAL OF NUCLEAR MATERIALS,2014,454(42007):173—177.
APA Li, JJ.,Huang, HF.,Lei, GH.,Huang, Q.,Liu, RD.,...&Yan, L.(2014).Evolution of amorphization and nanohardness in SiC under Xe ion irradiation.JOURNAL OF NUCLEAR MATERIALS,454(42007),173—177.
MLA Li, JJ,et al."Evolution of amorphization and nanohardness in SiC under Xe ion irradiation".JOURNAL OF NUCLEAR MATERIALS 454.42007(2014):173—177.

入库方式: OAI收割

来源:上海应用物理研究所

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