New high-pressure polymorph of In2S3 with defect Th3P4-type structure
文献类型:期刊论文
作者 | Lai, XJ ; Zhu, F ; Wu, Y ; Huang, R ; Wu, X ; Zhang, Q ; Yang, K ; Qin, S |
刊名 | JOURNAL OF SOLID STATE CHEMISTRY
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出版日期 | 2014 |
卷号 | 210期号:1页码:155—159 |
关键词 | POST-PEROVSKITE PHASE CRYSTAL-STRUCTURE TRANSITION MGSIO3 MBAR |
ISSN号 | 0022-4596 |
通讯作者 | xiang.wu@pku.edu.cn ; sqin@pku.edu.cn |
英文摘要 | The high pressure behavior of beta-In2S3 (14(1)/amd and Z=16) has been studied by in situ synchrotron radiation X-ray diffraction combined with diamond anvil cell up to 71.7 GPa. Three pressure-induced phase transitions are evidenced at similar to 6.6 GPa, similar to 11.1 GPa at room temperature and 35.6 GPa after the high-temperature annealing using a portable laser heating system. The new polymorph of In2S3 at 35.6 GPa is assigned to the denser cubic defect Th3P4 structure (I (4) over bar 3d and Z=5.333), whose unit-cell parameters are a=7.557(1) angstrom and V=431.6(2) angstrom(3). The Th3P4-type phase can be stable at least up to 71.7 GPa and cannot be preserved at ambient pressure. The pressure-volume relationship is well described by the second-order Birch-Murnaghan Equation of State, which yields B-o=63(3) GPa and B-o' = 4 (fixed) for the beta-In2S3 phase and B-o=87(3) GPa and B-o'=4 (fixed) for the defect Th3P4-type phase respectively. (C) 2013 Elsevier Inc. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000330081900024 |
公开日期 | 2015-03-13 |
源URL | [http://ir.sinap.ac.cn/handle/331007/14272] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Lai, XJ,Zhu, F,Wu, Y,et al. New high-pressure polymorph of In2S3 with defect Th3P4-type structure[J]. JOURNAL OF SOLID STATE CHEMISTRY,2014,210(1):155—159. |
APA | Lai, XJ.,Zhu, F.,Wu, Y.,Huang, R.,Wu, X.,...&Qin, S.(2014).New high-pressure polymorph of In2S3 with defect Th3P4-type structure.JOURNAL OF SOLID STATE CHEMISTRY,210(1),155—159. |
MLA | Lai, XJ,et al."New high-pressure polymorph of In2S3 with defect Th3P4-type structure".JOURNAL OF SOLID STATE CHEMISTRY 210.1(2014):155—159. |
入库方式: OAI收割
来源:上海应用物理研究所
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