中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Outgassing analysis of molecular glass photoresists under EUV irradiation

文献类型:期刊论文

作者Chen, L ; Xu, J ; Yuan, H ; Yang, SM ; Wang, LS ; Wu, YQ ; Zhao, J ; Chen, M ; Liu, HG ; Li, SY ; Tai, RZ ; Wang, SQ ; Yang, GQ
刊名SCIENCE CHINA-CHEMISTRY
出版日期2014
卷号57期号:12页码:1746—1750
关键词LITHOGRAPHY
ISSN号1674-7291
通讯作者g1704@iccas.ac.cn ; gqyang@iccas.ac.cn
英文摘要A device was designed and assembled to analyze the outgassing of molecular glass (MG) photoresists under extreme ultraviolet (EUV) exposure. The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl (t-Boc), photo-generated acid (PAG), and acid quencher was systematically investigated. Based on experiments, some solutions for reducing the outgassing of MG photoresists were proposed.
收录类别SCI
语种英语
WOS记录号WOS:000346047500018
公开日期2015-03-13
源URL[http://ir.sinap.ac.cn/handle/331007/14296]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Chen, L,Xu, J,Yuan, H,et al. Outgassing analysis of molecular glass photoresists under EUV irradiation[J]. SCIENCE CHINA-CHEMISTRY,2014,57(12):1746—1750.
APA Chen, L.,Xu, J.,Yuan, H.,Yang, SM.,Wang, LS.,...&Yang, GQ.(2014).Outgassing analysis of molecular glass photoresists under EUV irradiation.SCIENCE CHINA-CHEMISTRY,57(12),1746—1750.
MLA Chen, L,et al."Outgassing analysis of molecular glass photoresists under EUV irradiation".SCIENCE CHINA-CHEMISTRY 57.12(2014):1746—1750.

入库方式: OAI收割

来源:上海应用物理研究所

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