Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
文献类型：期刊论文
| 作者 | Li, XH ; Cai, YY ; Gong, LH ; Fu, W ; Wang, KX ; Bao, HL ; Wei, X ; Chen, JS |
| 刊名 | CHEMISTRY-A EUROPEAN JOURNAL
 |
| 出版日期 | 2014 |
| 卷号 | 20期号:50页码:16732—16737 |
| 关键词 | AROMATIC NITRO-COMPOUNDS CATALYTIC-REDUCTION AMBIENT CONDITIONS TANDEM CATALYSIS GOLD CATALYSTS EFFICIENT NANOPARTICLES DECOMPOSITION GENERATION SUPPORTS |
| ISSN号 | 0947-6539 |
| 通讯作者 | weixiao@sjtu.edu.cn ; chemcj@sjtu.edu.cn |
| 英文摘要 | A mild photochemical approach was applied to construct highly coupled metal-semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high-pressure gases or sacrificial additives. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000346055800041 |
| 公开日期 | 2015-03-13 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/14310]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Li, XH,Cai, YY,Gong, LH,et al. Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid[J]. CHEMISTRY-A EUROPEAN JOURNAL,2014,20(50):16732—16737. |
| APA | Li, XH.,Cai, YY.,Gong, LH.,Fu, W.,Wang, KX.,...&Chen, JS.(2014).Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid.CHEMISTRY-A EUROPEAN JOURNAL,20(50),16732—16737. |
| MLA | Li, XH,et al."Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid".CHEMISTRY-A EUROPEAN JOURNAL 20.50(2014):16732—16737. |
入库方式： OAI收割
来源：上海应用物理研究所
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