中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+delta Thin Films on NdGaO3 Substrates

文献类型:期刊论文

作者Liu, M ; Zou, Q ; Ma, CR ; Collins, G ; Mi, SB ; Jia, CL ; Guo, HM ; Gao, HJ ; Chen, CL
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2014
卷号6期号:11页码:8526
关键词LaBaCo2O6 thin film anisotropic transport properties interface
ISSN号1944-8244
通讯作者Liu, M (reprint author), Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China.
中文摘要Thin films of double-perovskite structural LaBaCo2O5.5+delta were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.
资助信息National Science Foundation [NSF-NIRT-0709293]; Natural Science Foundation of China [51202185, 11028409, 51390472]; Department of Energy [DE-FE0003780]; State of Texas through Texas Center for Superconductivity at the University of Houston
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/58783]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, M,Zou, Q,Ma, CR,et al. Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+delta Thin Films on NdGaO3 Substrates[J]. ACS APPLIED MATERIALS & INTERFACES,2014,6(11):8526.
APA Liu, M.,Zou, Q.,Ma, CR.,Collins, G.,Mi, SB.,...&Chen, CL.(2014).Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+delta Thin Films on NdGaO3 Substrates.ACS APPLIED MATERIALS & INTERFACES,6(11),8526.
MLA Liu, M,et al."Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+delta Thin Films on NdGaO3 Substrates".ACS APPLIED MATERIALS & INTERFACES 6.11(2014):8526.

入库方式: OAI收割

来源:物理研究所

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