中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tuning the Band Gap in Silicene by Oxidation

文献类型:期刊论文

作者Du, Y ; Zhuang, JC ; Liu, HS ; Xu, X ; Eilers, S ; Wu, KH ; Cheng, P ; Zhao, JJ ; Pi, XD ; See, KW ; Peleckis, G ; Wang, XL ; Dou, SX
刊名ACS NANO
出版日期2014
卷号8期号:10页码:10019
关键词silicene oxidation band gap STM DFT calculation
ISSN号1936-0851
通讯作者Du, Y (reprint author), Univ Wollongong, ISEM, Wollongong, NSW 2525, Australia.
中文摘要Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. With the use of low-temperature scanning tunneling microscopy, we find that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band gap engineering, which is dominated by different buckled structures in root 13 x root 13, 4 x 4, and 2 root 3 x 2 root 3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on root 13 x root 13, 4 x 4, and 2 root 3 x 2 root 3 structures under oxidation, which is verified by in situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.
资助信息Australian Research Council (ARC) [DP 140102581]; Australian Research Council (ARC) through Linkage, Infrastructure, Equipment and Facilities (LIEF) [LE100100081, LE110100099]; National Natural Science Foundation of China [11134005]; University of Wollongong; University Research Council (URC)
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/58790]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Du, Y,Zhuang, JC,Liu, HS,et al. Tuning the Band Gap in Silicene by Oxidation[J]. ACS NANO,2014,8(10):10019.
APA Du, Y.,Zhuang, JC.,Liu, HS.,Xu, X.,Eilers, S.,...&Dou, SX.(2014).Tuning the Band Gap in Silicene by Oxidation.ACS NANO,8(10),10019.
MLA Du, Y,et al."Tuning the Band Gap in Silicene by Oxidation".ACS NANO 8.10(2014):10019.

入库方式: OAI收割

来源:物理研究所

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