Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes
文献类型：期刊论文
| 作者 | Zhang, J ; Yu, H ; Chen, W ; Tian, XZ ; Liu, DH ; Cheng, M ; Xie, GB ; Yang, W ; Yang, R ; Bai, XD ; Shi, DX ; Zhang, GY |
| 刊名 | ACS NANO
 |
| 出版日期 | 2014 |
| 卷号 | 8期号:6页码:6024 |
| 关键词 | MoS2 chemical vapor deposition (CVD) Raman spectrum photoluminescence field effect transistor |
| ISSN号 | 1936-0851 |
| 通讯作者 | Zhang, GY (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report a scalable growth of monolayer MoS2 films on SiO2 substrates by chemical vapor deposition. As-grown polycrystalline MoS2 films are continuous over the entire substrate surface with a tunable grain size from similar to 20 nm up to similar to 1 mu m. An obvious blue-shift (up to 80 meV) of photoluminescence peaks was observed from a series samples with different grain sizes. Back-gated field effect transistors based on a polycrystalline MoS2 film with a typical grain size of similar to 600 nm shows a field mobility of similar to 7 cm(2)/(V s) and on/off ratio of similar to 10(6), comparable to those achieved from exfoliated MoS2. Our work provides a route toward scaled-up synthesis of high-quality monolayer MoS2 for electronic and optoelectronic devices. |
| 资助信息 | National Basic Research Program of China (973 Program) [2013CB934500, 2012CB921302]; National Science Foundation of China (NSFC) [91223204, 61325021, 11204358, 11174333]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58793]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, J,Yu, H,Chen, W,et al. Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes[J]. ACS NANO,2014,8(6):6024. |
| APA | Zhang, J.,Yu, H.,Chen, W.,Tian, XZ.,Liu, DH.,...&Zhang, GY.(2014).Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes.ACS NANO,8(6),6024. |
| MLA | Zhang, J,et al."Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes".ACS NANO 8.6(2014):6024. |
入库方式： OAI收割
来源：物理研究所
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