中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes

文献类型:期刊论文

作者Zhang, J ; Yu, H ; Chen, W ; Tian, XZ ; Liu, DH ; Cheng, M ; Xie, GB ; Yang, W ; Yang, R ; Bai, XD ; Shi, DX ; Zhang, GY
刊名ACS NANO
出版日期2014
卷号8期号:6页码:6024
关键词MoS2 chemical vapor deposition (CVD) Raman spectrum photoluminescence field effect transistor
ISSN号1936-0851
通讯作者Zhang, GY (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We report a scalable growth of monolayer MoS2 films on SiO2 substrates by chemical vapor deposition. As-grown polycrystalline MoS2 films are continuous over the entire substrate surface with a tunable grain size from similar to 20 nm up to similar to 1 mu m. An obvious blue-shift (up to 80 meV) of photoluminescence peaks was observed from a series samples with different grain sizes. Back-gated field effect transistors based on a polycrystalline MoS2 film with a typical grain size of similar to 600 nm shows a field mobility of similar to 7 cm(2)/(V s) and on/off ratio of similar to 10(6), comparable to those achieved from exfoliated MoS2. Our work provides a route toward scaled-up synthesis of high-quality monolayer MoS2 for electronic and optoelectronic devices.
资助信息National Basic Research Program of China (973 Program) [2013CB934500, 2012CB921302]; National Science Foundation of China (NSFC) [91223204, 61325021, 11204358, 11174333]; Chinese Academy of Sciences
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/58793]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, J,Yu, H,Chen, W,et al. Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes[J]. ACS NANO,2014,8(6):6024.
APA Zhang, J.,Yu, H.,Chen, W.,Tian, XZ.,Liu, DH.,...&Zhang, GY.(2014).Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes.ACS NANO,8(6),6024.
MLA Zhang, J,et al."Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes".ACS NANO 8.6(2014):6024.

入库方式: OAI收割

来源:物理研究所

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