中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Magnetic Tuning of the Photovoltaic Effect in Silicon-Based Schottky Junctions

文献类型:期刊论文

作者Wang, SH ; Wang, WX ; Zou, LK ; Zhang, X ; Cai, JW ; Sun, ZG ; Shen, BG ; Sun, JR
刊名ADVANCED MATERIALS
出版日期2014
卷号26期号:47页码:8059
ISSN号0935-9648
通讯作者Sun, JR (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要A magnetic tuning of the photovoltaic effect is demonstrated for the Schottky junction formed by a ferromagnetic (FM) layer and silicon. Obvious anisotropic magnetic photovoltaic effects (AMV) are gained not only in the FM layer but also in the Si substrate though the latter is non-magnetic. Key factors determining the AMV of Si are identified.
资助信息National Basic Research of China; National Natural Science Foundation of China; Knowledge Innovation Project of the Chinese Academy of Science; Beijing Municipal Nature Science Foundation
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/58828]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, SH,Wang, WX,Zou, LK,et al. Magnetic Tuning of the Photovoltaic Effect in Silicon-Based Schottky Junctions[J]. ADVANCED MATERIALS,2014,26(47):8059.
APA Wang, SH.,Wang, WX.,Zou, LK.,Zhang, X.,Cai, JW.,...&Sun, JR.(2014).Magnetic Tuning of the Photovoltaic Effect in Silicon-Based Schottky Junctions.ADVANCED MATERIALS,26(47),8059.
MLA Wang, SH,et al."Magnetic Tuning of the Photovoltaic Effect in Silicon-Based Schottky Junctions".ADVANCED MATERIALS 26.47(2014):8059.

入库方式: OAI收割

来源:物理研究所

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