Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature
文献类型：期刊论文
| 作者 | Li, PS ; Chen, AT ; Li, DL ; Zhao, YG ; Zhang, S ; Yang, LF ; Liu, Y ; Zhu, MH ; Zhang, HY ; Han, XF |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2014 |
| 卷号 | 26期号:25页码:4320 |
| ISSN号 | 0935-9648 |
| 通讯作者 | Zhao, YG (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | Electric-field-controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric structure by electric fields without the assistance of a magnetic field through strain-mediated interaction. These results provide a new way of exploring electric-field-controlled spintronics. |
| 资助信息 | 973 project of the Ministry of Science and Technology of China [2009CB929202, 2010CB934400]; National Science Foundation of China [10721404, 11304385]; Special Fund of Tsinghua for basic research [201110810625]; Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58832]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, PS,Chen, AT,Li, DL,et al. Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature[J]. ADVANCED MATERIALS,2014,26(25):4320. |
| APA | Li, PS.,Chen, AT.,Li, DL.,Zhao, YG.,Zhang, S.,...&Han, XF.(2014).Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature.ADVANCED MATERIALS,26(25),4320. |
| MLA | Li, PS,et al."Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature".ADVANCED MATERIALS 26.25(2014):4320. |
入库方式： OAI收割
来源：物理研究所
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