Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates
文献类型：期刊论文
| 作者 | Chen, JY ; Guo, YL ; Jiang, LL ; Xu, ZP ; Huang, LP ; Xue, YZ ; Geng, DC ; Wu, B ; Hu, WP ; Yu, G ; Liu, YQ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2014 |
| 卷号 | 26期号:9页码:1348 |
| ISSN号 | 0935-9648 |
| 通讯作者 | Liu, YQ (reprint author), Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China. |
| 中文摘要 | By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 mu m. The carrier mobility can reach about 5650 cm(2) V-1 s(-1), which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice. |
| 资助信息 | National Natural Science Foundation of China [60911130231, 61171054, 61101051, 51233006, 21273243]; National Major State Basic Research Development Program [2011CB808403, 2011CB932303, 2011CB932701, 2013CB933500]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58839]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, JY,Guo, YL,Jiang, LL,et al. Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates[J]. ADVANCED MATERIALS,2014,26(9):1348. |
| APA | Chen, JY.,Guo, YL.,Jiang, LL.,Xu, ZP.,Huang, LP.,...&Liu, YQ.(2014).Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.ADVANCED MATERIALS,26(9),1348. |
| MLA | Chen, JY,et al."Near-Equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates".ADVANCED MATERIALS 26.9(2014):1348. |
入库方式： OAI收割
来源：物理研究所
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