Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces
文献类型：期刊论文
| 作者 | Chen, YZ ; Bovet, N ; Kasama, T ; Gao, WW ; Yazdi, S ; Ma, C ; Pryds, N ; Linderoth, S |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2014 |
| 卷号 | 26期号:9页码:1462 |
| ISSN号 | 0935-9648 |
| 通讯作者 | Chen, YZ (reprint author), Tech Univ Denmark, Dept Energy Convers & Storage, Riso Campus, DK-4000 Roskilde, Denmark. |
| 中文摘要 | Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO(3)single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s(-1) are achieved at this novel oxide interface. |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58840]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, YZ,Bovet, N,Kasama, T,et al. Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces[J]. ADVANCED MATERIALS,2014,26(9):1462. |
| APA | Chen, YZ.,Bovet, N.,Kasama, T.,Gao, WW.,Yazdi, S.,...&Linderoth, S.(2014).Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces.ADVANCED MATERIALS,26(9),1462. |
| MLA | Chen, YZ,et al."Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces".ADVANCED MATERIALS 26.9(2014):1462. |
入库方式： OAI收割
来源：物理研究所
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