Defect-enhanced coupling between graphene and SiO2 substrate
文献类型：期刊论文
| 作者 | Wu, S ; Yang, R ; Cheng, M ; Yang, W ; Xie, GB ; Chen, P ; Shi, DX ; Zhang, GY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 105期号:6 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhang, GY (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Identifying the role of defects that limits graphene's quality is important for various graphene devices on SiO2. In this paper, monolayer graphene samples with defect densities varying from similar to 0.04 mu m(-2) to similar to 10 mu m(-2) on SiO2 are characterized by both microscopic imaging and electrical transport measurements. We found that the height of graphene on SiO2 is directly related to its defect densities with a reverse correlation, which in turn degrade graphene's quality through a complicated mechanism rather than defects scattering only. We suggest that, at relative high defect density regime, graphene-SiO2 coupling is greatly enhanced causing an increasing charged impurity scattering significantly. (C) 2014 AIP Publishing LLC. |
| 资助信息 | National Basic Research Program of China (973 Program) [2013CB934500, 2012CB921302, 2013CBA01600]; National Natural Science Foundation of China (NSFC) [91223204, 61325021, 11204358, 11174333, 61390503]; "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences [XDB07010100]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58895]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, S,Yang, R,Cheng, M,et al. Defect-enhanced coupling between graphene and SiO2 substrate[J]. APPLIED PHYSICS LETTERS,2014,105(6). |
| APA | Wu, S.,Yang, R.,Cheng, M.,Yang, W.,Xie, GB.,...&Zhang, GY.(2014).Defect-enhanced coupling between graphene and SiO2 substrate.APPLIED PHYSICS LETTERS,105(6). |
| MLA | Wu, S,et al."Defect-enhanced coupling between graphene and SiO2 substrate".APPLIED PHYSICS LETTERS 105.6(2014). |
入库方式： OAI收割
来源：物理研究所
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