Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields
文献类型：期刊论文
| 作者 | Tang, J ; Cao, S ; Gao, YA ; Sun, Y ; Geng, WD ; Williams, DA ; Jin, KJ ; Xu, XL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 105期号:4 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Geng, WD (reprint author), Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China. |
| 中文摘要 | We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5V to 0.5V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker. (C) 2014 AIP Publishing LLC. |
| 资助信息 | National Basic Research Program of China [2013CB328706, 2014CB921003]; National Natural Science Foundation of China [11174356, 61275060]; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB07030200]; Hundred Talents Program of the Chinese Academy of Sciences; China Postdoctoral Science Foundation [2013M540155] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58898]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tang, J,Cao, S,Gao, YA,et al. Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields[J]. APPLIED PHYSICS LETTERS,2014,105(4). |
| APA | Tang, J.,Cao, S.,Gao, YA.,Sun, Y.,Geng, WD.,...&Xu, XL.(2014).Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields.APPLIED PHYSICS LETTERS,105(4). |
| MLA | Tang, J,et al."Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields".APPLIED PHYSICS LETTERS 105.4(2014). |
入库方式： OAI收割
来源：物理研究所
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