Bipolar resistive switching behavior of La0.5Sr0.5CoO3-sigma films for nonvolatile memory applications
文献类型：期刊论文
| 作者 | Fu, YJ ; Xia, FJ ; Jia, YL ; Jia, CJ ; Li, JY ; Dai, XH ; Fu, GS ; Zhu, BY ; Liu, BT |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 104期号:22 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Fu, GS (reprint author), Hebei Univ, Hebei Prov Key Lab Optoelect Informat Mat, Baoding 071002, Hebei, Peoples R China. |
| 中文摘要 | Polycrystalline La0.5Sr0.5CoO3 (LSCO) film is prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition in order to explore the resistive switching behavior of the Ag/LSCO/Pt structure. It is found that the oxygen stoichiometric LSCO (LSCO-2) structure does not possess distinct rectifying behavior, while the oxygen deficient La0.5Sr0.5CoO3-sigma (LSCO-1) structure exhibits very stable bipolar resistive switching behavior, which is attributed to the oxygen vacancies in the LSCO film. The resistance ratio between high resistance state and low resistance state is about 100, which can be maintained up to 200 cycles and 25 h with no observable degradation, indicating that the Ag/LSCO-1/Pt device possesses very good endurance and retention characteristics. Moreover, the current-voltage characteristic of Ag/LSCO-1/Pt heterostructure can be well explained by the space-charge-limited conduction mechanism. The present results provide essential evidence for the analysis of the switching mechanism and evaluation of the memory devices. (C) 2014 AIP Publishing LLC. |
| 资助信息 | Natural Science Foundation of China [11374086, 11074063]; Natural Science Foundation of Hebei Province [E2012201035, E2011201092, E2013201176, E2012201088] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58907]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, YJ,Xia, FJ,Jia, YL,et al. Bipolar resistive switching behavior of La0.5Sr0.5CoO3-sigma films for nonvolatile memory applications[J]. APPLIED PHYSICS LETTERS,2014,104(22). |
| APA | Fu, YJ.,Xia, FJ.,Jia, YL.,Jia, CJ.,Li, JY.,...&Liu, BT.(2014).Bipolar resistive switching behavior of La0.5Sr0.5CoO3-sigma films for nonvolatile memory applications.APPLIED PHYSICS LETTERS,104(22). |
| MLA | Fu, YJ,et al."Bipolar resistive switching behavior of La0.5Sr0.5CoO3-sigma films for nonvolatile memory applications".APPLIED PHYSICS LETTERS 104.22(2014). |
入库方式： OAI收割
来源：物理研究所
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