Epitaxial growth of large-area bilayer graphene on Ru(0001)
文献类型:期刊论文
作者 | Que, YD ; Xiao, WD ; Fei, XM ; Chen, H ; Huang, L ; Du, SX ; Gao, HJ |
刊名 | APPLIED PHYSICS LETTERS |
出版日期 | 2014 |
卷号 | 104期号:9 |
ISSN号 | 0003-6951 |
通讯作者 | Xiao, WD (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moire pattern with a periodicity of similar to 21.5 nm and a mixture of AA-and AB-stacking. The root 3 x root 3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized p-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene. (C) 2014 AIP Publishing LLC. |
资助信息 | MOST [2013CBA01600, 2011CB932700]; NSFC; CAS |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/58925] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Que, YD,Xiao, WD,Fei, XM,et al. Epitaxial growth of large-area bilayer graphene on Ru(0001)[J]. APPLIED PHYSICS LETTERS,2014,104(9). |
APA | Que, YD.,Xiao, WD.,Fei, XM.,Chen, H.,Huang, L.,...&Gao, HJ.(2014).Epitaxial growth of large-area bilayer graphene on Ru(0001).APPLIED PHYSICS LETTERS,104(9). |
MLA | Que, YD,et al."Epitaxial growth of large-area bilayer graphene on Ru(0001)".APPLIED PHYSICS LETTERS 104.9(2014). |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。