The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy
文献类型：期刊论文
| 作者 | Gao, M ; Pan, Y ; Xu, WY ; Huang, L ; Wang, YL ; Lin, Y ; Gao, HJ |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2014 |
| 卷号 | 314页码:841 |
| ISSN号 | 0169-4332 |
| 关键词 | Reconstruction Silicon Platinum STM |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Nanoscale Phys & Devices Lab, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Two kinds of ordered reconstruction surface (root 3 x root 3) R30 degrees and (root 7 x root 7) R19.1 degrees, are prepared by depositing different amounts of Pt on Si(1 1 1). The atomic structure and electronic properties are studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy. Then two models are built to explain the results. And the calculated results using density functional theory based first principle calculation show that the distance between Pt and Si atoms in (root 7 x root 7) R19.1 degrees structure is smaller than that in ( root 3 x root 3) R30 degrees structure, which can increase the bonding energy between Pt and Si atoms. (C) 2014 Elsevier B.V. All rights reserved. |
| 资助信息 | National Natural Science Foundation of China [61306015]; Fundamental Research Funds for the Central University of China [ZYGX2012J037] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/58936]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, M,Pan, Y,Xu, WY,et al. The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy[J]. APPLIED SURFACE SCIENCE,2014,314:841. |
| APA | Gao, M.,Pan, Y.,Xu, WY.,Huang, L.,Wang, YL.,...&Gao, HJ.(2014).The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy.APPLIED SURFACE SCIENCE,314,841. |
| MLA | Gao, M,et al."The atomic structure of Pt on Si(111) studied by scanning tunneling microscopy".APPLIED SURFACE SCIENCE 314(2014):841. |
入库方式： OAI收割
来源：物理研究所
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