Anomalous Hall effect in perpendicular CoFeB thin films
文献类型:期刊论文
作者 | Zhu, T |
刊名 | CHINESE PHYSICS B
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出版日期 | 2014 |
卷号 | 23期号:4 |
关键词 | anomalous Hall effect perpendicular magnetic anisotropy magnetic properties of interfaces |
ISSN号 | 1674-1056 |
通讯作者 | Zhu, T (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films. |
资助信息 | National Basic Research Program of China [2012CB933102]; National Natural Science Foundation of China [50871120, 11079052, 11174354] |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59006] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhu, T. Anomalous Hall effect in perpendicular CoFeB thin films[J]. CHINESE PHYSICS B,2014,23(4). |
APA | Zhu, T.(2014).Anomalous Hall effect in perpendicular CoFeB thin films.CHINESE PHYSICS B,23(4). |
MLA | Zhu, T."Anomalous Hall effect in perpendicular CoFeB thin films".CHINESE PHYSICS B 23.4(2014). |
入库方式: OAI收割
来源:物理研究所
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