中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anomalous Hall effect in perpendicular CoFeB thin films

文献类型:期刊论文

作者Zhu, T
刊名CHINESE PHYSICS B
出版日期2014
卷号23期号:4
关键词anomalous Hall effect perpendicular magnetic anisotropy magnetic properties of interfaces
ISSN号1674-1056
通讯作者Zhu, T (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.
中文摘要Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.
资助信息National Basic Research Program of China [2012CB933102]; National Natural Science Foundation of China [50871120, 11079052, 11174354]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59006]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhu, T. Anomalous Hall effect in perpendicular CoFeB thin films[J]. CHINESE PHYSICS B,2014,23(4).
APA Zhu, T.(2014).Anomalous Hall effect in perpendicular CoFeB thin films.CHINESE PHYSICS B,23(4).
MLA Zhu, T."Anomalous Hall effect in perpendicular CoFeB thin films".CHINESE PHYSICS B 23.4(2014).

入库方式: OAI收割

来源:物理研究所

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