Observation of a Flat Band in Silicene
文献类型：期刊论文
| 作者 | Feng, Y ; Feng, BJ ; Xie, ZJ ; Li, WB ; Liu, X ; Liu, DF ; Zhao, L ; Chen, L ; Zhou, XJ ; Wu, KH |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 31期号:12 |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhou, XJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The electronic structure of silicene on Ag(111) is studied by scanning tunneling microscopy and angle resolved photoemission spectroscopy. A flat band at 0.9eV below the Fermi level is revealed. We find that the flat band is strongly suppressed near atomic defects, domain boundaries and step edges compared to that on the flat terraces. The discovery of the flat band and its sensitivity to local perturbations provides a new way to manipulate the electronic structure and properties of silicene. |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59017]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, Y,Feng, BJ,Xie, ZJ,et al. Observation of a Flat Band in Silicene[J]. CHINESE PHYSICS LETTERS,2014,31(12). |
| APA | Feng, Y.,Feng, BJ.,Xie, ZJ.,Li, WB.,Liu, X.,...&Wu, KH.(2014).Observation of a Flat Band in Silicene.CHINESE PHYSICS LETTERS,31(12). |
| MLA | Feng, Y,et al."Observation of a Flat Band in Silicene".CHINESE PHYSICS LETTERS 31.12(2014). |
入库方式： OAI收割
来源：物理研究所
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