Semimetal Na3Bi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Wen, J ; Guo, H ; Yan, CH ; Wang, ZY ; Chang, K ; Deng, P ; Zhang, T ; Zhang, ZD ; Ji, SH ; Wang, LL ; He, K ; Ma, XC ; Chen, X ; Xue, QK |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 31期号:11 |
| ISSN号 | 0256-307X |
| 通讯作者 | Xue, QK (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | Atomically flat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H-SiC(0001) substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for Na3Bi thin films on double-layer graphene are successfully established. The band structure of Na3Bi grown on graphene is mapped along (Gamma) over bar-(M) over bar and (Gamma) over bar-(K) over bar directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface. |
| 资助信息 | National Natural Science Foundation of China [11025419, 50831006]; National Basic Research Program of China [2011CB921904] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59020]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wen, J,Guo, H,Yan, CH,et al. Semimetal Na3Bi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2014,31(11). |
| APA | Wen, J.,Guo, H.,Yan, CH.,Wang, ZY.,Chang, K.,...&Xue, QK.(2014).Semimetal Na3Bi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy.CHINESE PHYSICS LETTERS,31(11). |
| MLA | Wen, J,et al."Semimetal Na3Bi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy".CHINESE PHYSICS LETTERS 31.11(2014). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。