Improved Photoluminescence in InGaN/GaN Strained Quantum Wells
文献类型：期刊论文
| 作者 | Ding, LZ ; Chen, H ; He, M ; Jiang, Y ; Lu, TP ; Deng, Z ; Chen, FS ; Yang, F ; Yang, Q ; Zhang, YL |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 31期号:7 |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, H (reprint author), S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China. |
| 中文摘要 | The influence of strain accumulation on optical properties is investigated for InGaN/GaN-based blue light-emitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InGaN multi-quantum wells (MQWs) by adopting more InGaN/GaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts. |
| 资助信息 | National High Technology Research and Development Programs of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; Science and Technology Innovation Program of Guangdong Provincial Department of Education of China [2012CXZD0017]; Industry-Academia-Research Union Special Fund of Guangdong Province of China [2012B091000169]; Science and Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Fund of China [2012B090600038] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59027]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ding, LZ,Chen, H,He, M,et al. Improved Photoluminescence in InGaN/GaN Strained Quantum Wells[J]. CHINESE PHYSICS LETTERS,2014,31(7). |
| APA | Ding, LZ.,Chen, H.,He, M.,Jiang, Y.,Lu, TP.,...&Zhang, YL.(2014).Improved Photoluminescence in InGaN/GaN Strained Quantum Wells.CHINESE PHYSICS LETTERS,31(7). |
| MLA | Ding, LZ,et al."Improved Photoluminescence in InGaN/GaN Strained Quantum Wells".CHINESE PHYSICS LETTERS 31.7(2014). |
入库方式： OAI收割
来源：物理研究所
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