中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

文献类型:期刊论文

作者Ding, LZ ; Chen, H ; He, M ; Jiang, Y ; Lu, TP ; Deng, Z ; Chen, FS ; Yang, F ; Yang, Q ; Zhang, YL
刊名CHINESE PHYSICS LETTERS
出版日期2014
卷号31期号:7
ISSN号0256-307X
通讯作者Chen, H (reprint author), S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China.
中文摘要The influence of strain accumulation on optical properties is investigated for InGaN/GaN-based blue light-emitting diodes grown by metal organic vapor-phase epitaxy. It is found that it is possible to reduce the strain relaxation and hence the nonradiative recombination centers in InGaN multi-quantum wells (MQWs) by adopting more InGaN/GaN MQWs pairs. The alleviation of strain relaxation in a superlattice layer results in the crystalline perfection and effective quality improvement of the epitaxial structures. With suitable control of the crystalline quality and reduced strain relaxation in the MQWs, there shows a 4-fold increase in light output luminous efficiency as compared to their conventional counterparts.
资助信息National High Technology Research and Development Programs of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; Science and Technology Innovation Program of Guangdong Provincial Department of Education of China [2012CXZD0017]; Industry-Academia-Research Union Special Fund of Guangdong Province of China [2012B091000169]; Science and Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Fund of China [2012B090600038]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59027]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ding, LZ,Chen, H,He, M,et al. Improved Photoluminescence in InGaN/GaN Strained Quantum Wells[J]. CHINESE PHYSICS LETTERS,2014,31(7).
APA Ding, LZ.,Chen, H.,He, M.,Jiang, Y.,Lu, TP.,...&Zhang, YL.(2014).Improved Photoluminescence in InGaN/GaN Strained Quantum Wells.CHINESE PHYSICS LETTERS,31(7).
MLA Ding, LZ,et al."Improved Photoluminescence in InGaN/GaN Strained Quantum Wells".CHINESE PHYSICS LETTERS 31.7(2014).

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。