MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
文献类型：期刊论文
| 作者 | Wang, G ; Wang, L ; Chen, H ; Wang, WX ; Shi, ZW ; Chen, YL ; He, M ; Lu, PY ; Qian, WN |
| 刊名 | CHINESE SCIENCE BULLETIN
 |
| 出版日期 | 2014 |
| 卷号 | 59期号:20页码:2383 |
| 关键词 | InAs/GaSb superlatices High absorption Molecular beam epitaxy |
| ISSN号 | 1001-6538 |
| 通讯作者 | He, M (reprint author), S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China. |
| 中文摘要 | Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs (8 MLs)/GaSb (8 MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 A mu m at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8 MLs)/GaSb (8 MLs) SLs have better crystalline quality than that of the InAs (6 MLs)/GaSb (3 MLs) SLs. However, compared with infrared absorption in the 2.5-4.3 A mu m range, the optical absorption of InAs (6 MLs)/GaSb (3 MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness. |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; National Natural Science Foundation of China [11204360, 61210014]; Science & Technology Innovation Program of Guangdong Provincial Department of Education of China [2012CXZD0017]; Industry-Academia-Research Union Special Fund of Guangdong Province of China [2012B091000169]; Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China [2012B090600038] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59048]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Wang, L,Chen, H,et al. MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices[J]. CHINESE SCIENCE BULLETIN,2014,59(20):2383. |
| APA | Wang, G.,Wang, L.,Chen, H.,Wang, WX.,Shi, ZW.,...&Qian, WN.(2014).MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices.CHINESE SCIENCE BULLETIN,59(20),2383. |
| MLA | Wang, G,et al."MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices".CHINESE SCIENCE BULLETIN 59.20(2014):2383. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。