中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Modeling a radio-frequency single-electron-transistor scanning probe

文献类型:期刊论文

作者Lu, L ; Su, LN ; Sun, JD ; Li, XX ; Qin, H ; Ji, ZQ ; Blick, RH
刊名JAPANESE JOURNAL OF APPLIED PHYSICS
出版日期2014
卷号53期号:8
ISSN号0021-4922
通讯作者Lu, L (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China.
中文摘要Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10(-5)-10(-3) e/Hz(1/2) and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. (C) 2014 The Japan Society of Applied Physics
资助信息Instrument Developing Project of the Chinese Academy of Sciences [YZ201152]; National Natural Science Foundation of China [11074280]; Jiangsu Planned Projects for Postdoctoral Research Funds [1301054B]; Graduate Student Innovation Program for Universities of Jiangsu Province [CXLX12-0724]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59115]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lu, L,Su, LN,Sun, JD,et al. Modeling a radio-frequency single-electron-transistor scanning probe[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(8).
APA Lu, L.,Su, LN.,Sun, JD.,Li, XX.,Qin, H.,...&Blick, RH.(2014).Modeling a radio-frequency single-electron-transistor scanning probe.JAPANESE JOURNAL OF APPLIED PHYSICS,53(8).
MLA Lu, L,et al."Modeling a radio-frequency single-electron-transistor scanning probe".JAPANESE JOURNAL OF APPLIED PHYSICS 53.8(2014).

入库方式: OAI收割

来源:物理研究所

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