Modeling a radio-frequency single-electron-transistor scanning probe
文献类型:期刊论文
作者 | Lu, L ; Su, LN ; Sun, JD ; Li, XX ; Qin, H ; Ji, ZQ ; Blick, RH |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
![]() |
出版日期 | 2014 |
卷号 | 53期号:8 |
ISSN号 | 0021-4922 |
通讯作者 | Lu, L (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Jiangsu, Peoples R China. |
中文摘要 | Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10(-5)-10(-3) e/Hz(1/2) and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. (C) 2014 The Japan Society of Applied Physics |
资助信息 | Instrument Developing Project of the Chinese Academy of Sciences [YZ201152]; National Natural Science Foundation of China [11074280]; Jiangsu Planned Projects for Postdoctoral Research Funds [1301054B]; Graduate Student Innovation Program for Universities of Jiangsu Province [CXLX12-0724] |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59115] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Lu, L,Su, LN,Sun, JD,et al. Modeling a radio-frequency single-electron-transistor scanning probe[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(8). |
APA | Lu, L.,Su, LN.,Sun, JD.,Li, XX.,Qin, H.,...&Blick, RH.(2014).Modeling a radio-frequency single-electron-transistor scanning probe.JAPANESE JOURNAL OF APPLIED PHYSICS,53(8). |
MLA | Lu, L,et al."Modeling a radio-frequency single-electron-transistor scanning probe".JAPANESE JOURNAL OF APPLIED PHYSICS 53.8(2014). |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。