Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
文献类型：期刊论文
| 作者 | Luan, CB ; Lin, ZJ ; Lv, YJ ; Zhao, JT ; Wang, YT ; Chen, H ; Wang, ZG |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 116期号:4 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed. (C) 2014 AIP Publishing LLC. |
| 资助信息 | National Natural Science Foundation of China [11174182]; Specialized Research Fund for the Doctoral Program of Higher Education [20110131110005]; Graduate Independent Innovation Foundation of Shandong University, GIIFSDU [yzc12064] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59143]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Luan, CB,Lin, ZJ,Lv, YJ,et al. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors[J]. JOURNAL OF APPLIED PHYSICS,2014,116(4). |
| APA | Luan, CB.,Lin, ZJ.,Lv, YJ.,Zhao, JT.,Wang, YT.,...&Wang, ZG.(2014).Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors.JOURNAL OF APPLIED PHYSICS,116(4). |
| MLA | Luan, CB,et al."Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors".JOURNAL OF APPLIED PHYSICS 116.4(2014). |
入库方式： OAI收割
来源：物理研究所
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