Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer
文献类型：期刊论文
| 作者 | Liang, SH ; Tao, LL ; Liu, DP ; Lu, Y ; Han, XF |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 115期号:13 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Liang, SH (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China. |
| 中文摘要 | We report a first principles theoretical investigation of spin polarized quantum transport in Mn2Ga/MgO/Mn2Ga and Mn3Ga/MgO/Mn3Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn2Ga-based MTJs, however, only a 5% TMR ratio for Mn3Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn2Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn2Ga/MgO/Mn2Ga MTJ can be improved by inserting Co layer. (C) 2014 AIP Publishing LLC. |
| 资助信息 | State Key Project of Fundamental Research of Ministry of Science and Technology [MOST] [2010CB934400]; National Natural Science Foundation of China [NSFC] [10934009, 11104338, 51021061]; NSFC [F040803]; ANR of France [F040803] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59162]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liang, SH,Tao, LL,Liu, DP,et al. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer[J]. JOURNAL OF APPLIED PHYSICS,2014,115(13). |
| APA | Liang, SH,Tao, LL,Liu, DP,Lu, Y,&Han, XF.(2014).Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer.JOURNAL OF APPLIED PHYSICS,115(13). |
| MLA | Liang, SH,et al."Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer".JOURNAL OF APPLIED PHYSICS 115.13(2014). |
入库方式： OAI收割
来源：物理研究所
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