Temperature dependence of refractive indices for 4H-and 6H-SiC
文献类型:期刊论文
作者 | Xu, CH ; Wang, SC ; Wang, G ; Liang, JK ; Wang, SP ; Bai, L ; Yang, JW ; Chen, XL |
刊名 | JOURNAL OF APPLIED PHYSICS
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出版日期 | 2014 |
卷号 | 115期号:11 |
关键词 | infrared spectra refractive index silicon compounds thermo-optical effects visible spectra wide band gap semiconductors |
ISSN号 | 0021-8979 |
通讯作者 | Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China. |
中文摘要 | The refractive indices of 4H- and 6H-SiC single crystals at wavelengths of 404.7, 435.8, 480.0, 546.1, 587.5, 643.8, 706.5, 852.1, 1014.0, 1529.6, and 2325.4 nm are carefully measured from 293 to 493 K by the method of minimum deviation. We find that ordinary (no) and extraordinary (ne) refractive indices for both crystals increase with the elevated temperature. The temperature-dependent Sellmeier equations of refractive indices for 4H- and 6H-SiC are obtained and then thermo-optic coefficients (TOCs) are derived. The TOCs diminish very quickly at visible light region and become less dependent in the infrared light region. Such changing trends of TOCs can be explained by single-oscillator approximation. The results may provide the important reference value for designing the optoelectronic and nonlinear optical devices based on SiC. |
资助信息 | National Natural Science Foundation of China [51272276, 51322211, 51072222]; Beijing Nova Program [2011096] |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59167] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xu, CH,Wang, SC,Wang, G,et al. Temperature dependence of refractive indices for 4H-and 6H-SiC[J]. JOURNAL OF APPLIED PHYSICS,2014,115(11). |
APA | Xu, CH.,Wang, SC.,Wang, G.,Liang, JK.,Wang, SP.,...&Chen, XL.(2014).Temperature dependence of refractive indices for 4H-and 6H-SiC.JOURNAL OF APPLIED PHYSICS,115(11). |
MLA | Xu, CH,et al."Temperature dependence of refractive indices for 4H-and 6H-SiC".JOURNAL OF APPLIED PHYSICS 115.11(2014). |
入库方式: OAI收割
来源:物理研究所
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