中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature dependence of refractive indices for 4H-and 6H-SiC

文献类型:期刊论文

作者Xu, CH ; Wang, SC ; Wang, G ; Liang, JK ; Wang, SP ; Bai, L ; Yang, JW ; Chen, XL
刊名JOURNAL OF APPLIED PHYSICS
出版日期2014
卷号115期号:11
关键词infrared spectra refractive index silicon compounds thermo-optical effects visible spectra wide band gap semiconductors
ISSN号0021-8979
通讯作者Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China.
中文摘要The refractive indices of 4H- and 6H-SiC single crystals at wavelengths of 404.7, 435.8, 480.0, 546.1, 587.5, 643.8, 706.5, 852.1, 1014.0, 1529.6, and 2325.4 nm are carefully measured from 293 to 493 K by the method of minimum deviation. We find that ordinary (no) and extraordinary (ne) refractive indices for both crystals increase with the elevated temperature. The temperature-dependent Sellmeier equations of refractive indices for 4H- and 6H-SiC are obtained and then thermo-optic coefficients (TOCs) are derived. The TOCs diminish very quickly at visible light region and become less dependent in the infrared light region. Such changing trends of TOCs can be explained by single-oscillator approximation. The results may provide the important reference value for designing the optoelectronic and nonlinear optical devices based on SiC.
资助信息National Natural Science Foundation of China [51272276, 51322211, 51072222]; Beijing Nova Program [2011096]
语种英语
公开日期2015-04-14
源URL[http://ir.iphy.ac.cn/handle/311004/59167]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, CH,Wang, SC,Wang, G,et al. Temperature dependence of refractive indices for 4H-and 6H-SiC[J]. JOURNAL OF APPLIED PHYSICS,2014,115(11).
APA Xu, CH.,Wang, SC.,Wang, G.,Liang, JK.,Wang, SP.,...&Chen, XL.(2014).Temperature dependence of refractive indices for 4H-and 6H-SiC.JOURNAL OF APPLIED PHYSICS,115(11).
MLA Xu, CH,et al."Temperature dependence of refractive indices for 4H-and 6H-SiC".JOURNAL OF APPLIED PHYSICS 115.11(2014).

入库方式: OAI收割

来源:物理研究所

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