Step flow and polytype transformation in growth of 4H-SiC crystals
文献类型：期刊论文
| 作者 | Liu, CJ ; Chen, XL ; Peng, TH ; Wang, B ; Wang, WJ ; Wang, G |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2014 |
| 卷号 | 394页码:126 |
| ISSN号 | 0022-0248 |
| 关键词 | Surface structure Polytype transformation Single crystal growth Silicon carbide Semiconducting materials |
| 通讯作者 | Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China. |
| 中文摘要 | 4H-SiC crystals containing polytype defects are investigated by optical microscopy, atomic force microscopy, and Raman scattering, aiming at understanding the mechanism of polytype transformation during growth processes. It is observed that the crystal surfaces around the facet are uneven and contain many macroscopic triangular domains, consisting of wide triangular terraces and giant macrosteps. Nucleation and growth on the wide terraces are demonstrated to be responsible for the polytype transformation. A possible polytype transformation mechanism is put forward, which can explain the stabilizing effect of nitrogen on 4H-SiC growth. (C) 2014 Elsevier B.V. All rights reserved. |
| 资助信息 | National Natural Science Foundation of China [51072222, 51172270, 51272276]; National High Technology Research and Development Program of China [2011AA03A102] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59187]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, CJ,Chen, XL,Peng, TH,et al. Step flow and polytype transformation in growth of 4H-SiC crystals[J]. JOURNAL OF CRYSTAL GROWTH,2014,394:126. |
| APA | Liu, CJ,Chen, XL,Peng, TH,Wang, B,Wang, WJ,&Wang, G.(2014).Step flow and polytype transformation in growth of 4H-SiC crystals.JOURNAL OF CRYSTAL GROWTH,394,126. |
| MLA | Liu, CJ,et al."Step flow and polytype transformation in growth of 4H-SiC crystals".JOURNAL OF CRYSTAL GROWTH 394(2014):126. |
入库方式： OAI收割
来源：物理研究所
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