AlN epilayers and nanostructures growth in a homebuilt alumina hot-wall high temperature chemical vapor deposition system
文献类型：期刊论文
| 作者 | Zhang, D ; Liu, FM ; Yao, Y ; Yang, XA |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2014 |
| 卷号 | 25期号:5页码:2210 |
| ISSN号 | 0957-4522 |
| 通讯作者 | Liu, FM (reprint author), Beihang Univ, Sch Phys & Nucl Energy Engn, Dept Phys, Beijing 100191, Peoples R China. |
| 中文摘要 | AlN epilayers and nanostructures were grown in the range from 500 to 1500 A degrees C in a homebuilt alumina hot-wall high temperature chemical vapor deposition system. The results revealed that high quality AlN epilayers can be grown at high temperature beyond 1100 A degrees C and versatile AlN nanostrctures can be grown at low temperature below 900 A degrees C, enabling the system to tailor AlN structures just by changing the growth temperature. High growth temperature as well as low N/Al ratio was preferable to surface mobility of the adatoms and lateral growth, resulting in a series of morphology changes. Meanwhile, the crystal quality improved with the increasing growth temperature, as proved by the decreasing FWHM of (0002) plane rocking curve of the epilayer and narrowing peaks in theta-2 theta XRD pattern of the nanostructures. The epitaixal relationship was proven to be AlN (0001) aEuro- sapphire (0001) and AlN [1-210] aEuro- sapphire [1-100]. The layer was in tensile stress state in several tens of nanometers range near the interface and turned into compressive stress state out of the range. Tens of atoms layers of sapphire interface were substituted for AlN lattice due to nitridation. Low growth temperature produced versatile AlN nanostructures, whose crystal structures varied from amorphous in 500 A degrees C case to defective crystal in 700 A degrees C case and improved crystallinity in 900 A degrees C case. |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59230]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, D,Liu, FM,Yao, Y,et al. AlN epilayers and nanostructures growth in a homebuilt alumina hot-wall high temperature chemical vapor deposition system[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(5):2210. |
| APA | Zhang, D,Liu, FM,Yao, Y,&Yang, XA.(2014).AlN epilayers and nanostructures growth in a homebuilt alumina hot-wall high temperature chemical vapor deposition system.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,25(5),2210. |
| MLA | Zhang, D,et al."AlN epilayers and nanostructures growth in a homebuilt alumina hot-wall high temperature chemical vapor deposition system".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 25.5(2014):2210. |
入库方式： OAI收割
来源：物理研究所
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