Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si
文献类型：期刊论文
| 作者 | Ye, DQ ; Mei, ZX ; Liang, HL ; Li, JQ ; Hou, YN ; Gu, CZ ; Azarov, A ; Kuznetsov, A ; Hong, WC ; Lu, YC ; Du, XL |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2014 |
| 卷号 | 47期号:25 |
| 关键词 | enhancement ZnO/MgZnO HFET bottom-gate |
| ISSN号 | 0022-3727 |
| 通讯作者 | Mei, ZX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Key Lab Renewable Energy, Beijing 100190, Peoples R China. |
| 中文摘要 | We report a bottom-gate and enhancement-mode ZnO/Mg0.5Zn0.5O heterojunction field effect transistor (HFET) on Si. This new heterostructure which is grown by using molecular beam epitaxy (MBE) reduces interface defects and traps. By tailoring Mg composition (x) in the MgxZn1-xO barrier layer up to 50%, the Mg0.5Zn0.5O exhibits insulating properties and the resultant HFET works in an enhancement mode with a field effective mobility of mu FE = 21 cm(2)V(-1)s(-1), transconductance of g(m) = 44 mS mm(-1), on/off ratio of 1 x 10(5) and off current similar to 1.33 x 10(-8)A mm(-1). The device shows good ambient stability. |
| 资助信息 | Ministry of Science and Technology of China [2011CB302002, 2011CB302006]; National Science Foundation of China [11174348, 51272280, 11274366, 61204067, 61306011]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59260]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ye, DQ,Mei, ZX,Liang, HL,et al. Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014,47(25). |
| APA | Ye, DQ.,Mei, ZX.,Liang, HL.,Li, JQ.,Hou, YN.,...&Du, XL.(2014).Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si.JOURNAL OF PHYSICS D-APPLIED PHYSICS,47(25). |
| MLA | Ye, DQ,et al."Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si".JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.25(2014). |
入库方式： OAI收割
来源：物理研究所
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