Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps
文献类型：期刊论文
| 作者 | Wang, YJ ; Zhu, CR ; Shen, Y ; Yang, HF ; Liu, Z ; Gu, CZ ; Liu, BL ; Xu, XG |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2014 |
| 卷号 | 32期号:5 |
| ISSN号 | 1071-1023 |
| 通讯作者 | Wang, YJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Ion beam etching technology was applied to the surfaces of GaN-based vertical light-emitting diodes (V-LEDs). The ability to control morphology using this technology resulted in very uniform, hexagonal, closely packed hemispherical bumps on the n-type GaN layer. The textured V-LEDs showed a remarkable increase (130%) in light output power compared to the original, and no electrical deterioration was noted. This study demonstrates that ion beam etching is an effective approach for fabricating hemispherical bumps to achieve increased light extraction efficiency in GaN-based V-LEDs, and potentially other optical devices. (C) 2014 American Vacuum Society. |
| 资助信息 | National Basic Research Program of China [2009CB930500]; National Natural Science Foundation of China [1083401, 91023041, 61001045, 11174362]; CAS [KJCX2-EW-W02] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59298]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YJ,Zhu, CR,Shen, Y,et al. Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32(5). |
| APA | Wang, YJ.,Zhu, CR.,Shen, Y.,Yang, HF.,Liu, Z.,...&Xu, XG.(2014).Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,32(5). |
| MLA | Wang, YJ,et al."Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32.5(2014). |
入库方式： OAI收割
来源：物理研究所
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