Epitaxial growth of vanadium nitride thin films by laser molecule beam epitaxy
文献类型：期刊论文
| 作者 | Liu, XB ; Lu, HB ; He, M ; Jin, KJ ; Yang, GZ ; Ni, H ; Zhao, K |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 123页码:38 |
| 关键词 | Vanadium nitride Thin films Epitaxial growth |
| ISSN号 | 0167-577X |
| 通讯作者 | Lu, HB (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Vanadium nitride thin films were epitaxially grown on SrTiO3 and sapphire substrates by ablating vanadium target in activated N-2 atmosphere. The epitaxial orientation relationships of film/substrate are [001](vN)//[001](SrTiO3) and [111](vN)/[0001](alpha-Al2O3). Atomic force microscope measurements show the smooth surfaces of the films. High-resolution transmission electron microscope measurement was performed on the cross-section of VN/SrTiO3 sample, which shows a good epitaxial growth. Temperature-dependent resistance measurements demonstrate that the films have typical metallic conductivity. (C) 2014 Elsevier B.V. All rights reserved. |
| 资助信息 | National Basic Research Program of China [2010CB630704, 2012CB921403] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59316]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, XB,Lu, HB,He, M,et al. Epitaxial growth of vanadium nitride thin films by laser molecule beam epitaxy[J]. MATERIALS LETTERS,2014,123:38. |
| APA | Liu, XB.,Lu, HB.,He, M.,Jin, KJ.,Yang, GZ.,...&Zhao, K.(2014).Epitaxial growth of vanadium nitride thin films by laser molecule beam epitaxy.MATERIALS LETTERS,123,38. |
| MLA | Liu, XB,et al."Epitaxial growth of vanadium nitride thin films by laser molecule beam epitaxy".MATERIALS LETTERS 123(2014):38. |
入库方式： OAI收割
来源：物理研究所
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