A review of nanographene: growth and applications
文献类型:期刊论文
作者 | Meng, JL ; Shi, DX ; Zhang, GY |
刊名 | MODERN PHYSICS LETTERS B
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出版日期 | 2014 |
卷号 | 28期号:20 |
关键词 | Nanographene direct growth strain sensor resistance random access memory charge trapping memory |
ISSN号 | 0217-9849 |
通讯作者 | Shi, DX (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | Graphene's unique physical and chemical properties have attracted substantial interest for various potential applications for electronics, spintronics, optoelectronics, and so on. Nanographene not only has the properties of graphene, but also has the special properties of edge state. Direct growth of nanographene on arbitrary substrate without catalyst has advantage of simplicity in device fabrications. In this paper, we review our recent progress on direct growth of nanographene on various substrates and using these nanographene as building blocks for electronic devices. The growth process is catalyst-free, scalable, and of low-temperature. Strain sensor, charge trapping memory (CTM) and resistance random access memory (RRAM) with excellent performances are demonstrated by tuning the size and density of as-grown nanographene on substrates. |
资助信息 | National Basic Research Program of China (973 Program) [2013CB934500, 2013CBA01600]; National Natural Science Foundation of China (NSFC) [61325021, 91223204, 61390503, 11174333, 11204358]; Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB07010100] |
语种 | 英语 |
公开日期 | 2015-04-14 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59329] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Meng, JL,Shi, DX,Zhang, GY. A review of nanographene: growth and applications[J]. MODERN PHYSICS LETTERS B,2014,28(20). |
APA | Meng, JL,Shi, DX,&Zhang, GY.(2014).A review of nanographene: growth and applications.MODERN PHYSICS LETTERS B,28(20). |
MLA | Meng, JL,et al."A review of nanographene: growth and applications".MODERN PHYSICS LETTERS B 28.20(2014). |
入库方式: OAI收割
来源:物理研究所
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