Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4
文献类型：期刊论文
| 作者 | Zhou, JJ ; Feng, WX ; Liu, CC ; Guan, S ; Yao, YG |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2014 |
| 卷号 | 14期号:8页码:4767 |
| 关键词 | Quantum spin Hall insulator topological edge states dissipationless transport bismuth monobromide two-dimensional materials first-principles calculations |
| ISSN号 | 1530-6984 |
| 通讯作者 | Yao, YG (reprint author), Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China. |
| 中文摘要 | Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of similar to 0.18 eV, in single-layer Bi4Br4, which could be exfoliated from its three-dimensional bulk material due to the weakly bonded layered structure. The band gap of single-layer Bi4Br4 is tunable via strain engineering, and the QSH phase is robust against external strain. Moreover, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi4Br4 could be torn to ribbons with clean and atomically sharp edges. These nanoribbons, which have single-Dirac-cone edge states crossing the bulk band gap, are ideal wires for dissipationless transport. Our work thus provides a new promising material for experimental studies and practical applications of the QSH effect. |
| 资助信息 | MOST Project of China [2014CB920903, 2013CB921903, 2011CBA00100]; NSF of China [11174337, 11225418, 11374033]; SRFDPHE of China [20121101110046, 20131101120052] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59340]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, JJ,Feng, WX,Liu, CC,et al. Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4[J]. NANO LETTERS,2014,14(8):4767. |
| APA | Zhou, JJ,Feng, WX,Liu, CC,Guan, S,&Yao, YG.(2014).Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4.NANO LETTERS,14(8),4767. |
| MLA | Zhou, JJ,et al."Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4".NANO LETTERS 14.8(2014):4767. |
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来源：物理研究所
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