CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors
文献类型：期刊论文
| 作者 | Xia, J ; Huang, X ; Liu, LZ ; Wang, M ; Wang, L ; Huang, B ; Zhu, DD ; Li, JJ ; Gu, CZ ; Meng, XM |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2014 |
| 卷号 | 6期号:15页码:8949 |
| ISSN号 | 2040-3364 |
| 通讯作者 | Meng, XM (reprint author), Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China. |
| 中文摘要 | Synthesis of large-area, atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for the large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly-crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates using a simple chemical vapour deposition (CVD) method at atmospheric pressure. Atomic force microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that white the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at similar to 1.56 eV, indicating the transition from an indirect to a direct bandgap. Transmission electron microscopy (TEM) analysis confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, the photoresponse performance of photodetectors based on MoSe2 monolayer was studied for the first time. The devices exhibit a rapid response of similar to 60 ms and a good photoresponsivity of similar to 13 mA/W (using a 532 nm laser at an intensity of 1 mW mm(-2) and a bias of 10 V), suggesting that MoSe2 monolayer is a promising material for photodetection applications. |
| 资助信息 | Chinese Academy of Sciences [XDA09040203]; 973 Project [2012CB932401]; National Natural Science Foundation of China [11174362, 91023041, 61390503, 91323304]; Knowledge Innovation Project of Chinese Academy of Sciences [KJCX2-EW-W02] |
| 语种 | 英语 |
| 公开日期 | 2015-04-14 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/59352]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xia, J,Huang, X,Liu, LZ,et al. CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors[J]. NANOSCALE,2014,6(15):8949. |
| APA | Xia, J.,Huang, X.,Liu, LZ.,Wang, M.,Wang, L.,...&Meng, XM.(2014).CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.NANOSCALE,6(15),8949. |
| MLA | Xia, J,et al."CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors".NANOSCALE 6.15(2014):8949. |
入库方式： OAI收割
来源：物理研究所
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